Diffusion Process in IC Fabrication: Diffusion is the oldest technique used to add impurity into the Substrate. The main aim of the Diffusion Process in IC Fabrication is to change  the Conductivity of silicon substrate over…

Reactive Plasma Etching: The reactive plasma is the discharge in which gases ionized producing chemically active species, oxidizers, reagents. The plasma is reactive in both gaseous and solid phase, hence the name is Reactive Plasma.…

Lithography Process in IC Fabrication: Lithography Process is used to produce a multiple image on the resists which covers the wafer. A Lithography Process in IC Fabrication can be realised with the help of three…

Oxidation in IC Fabrication: Oxidation in IC Fabrication is very important process. In one line, oxidation can be explained as the production of SiO2 using the thermal growth technique. Some of the important uses of…

Vapour Phase Epitaxy Process: In chemical vapour deposition (CVD), the film is formed on the surface of the substrate by thermal decomposition and or the reaction of various gaseous compounds. As in CVD, the epitaxial…

Basic Planar Process in IC Fabrication: The Basic Planar Process in IC Fabrication are as listed below. Crystal growth and wafer preparation, Epitaxial growth, Oxidation, Lithography, Reactive plasma etching, Diffusion, Ion implantation, Metallization, Assembly techniques…