FET Equivalent Circuit Model: The complete FET Equivalent Circuit Model is shown in Fig. 11-5(a). It is seen that tilt source terminal is common to both input and out, so this is a common-source equivalent…
Coupling Capacitors: Coupling Capacitors are required at a circuit input to couple a signal source to the circuit without affecting the bias conditions. Similarly, loads are capacitor-coupled to the circuit output to avoid the change…
Biasing FET Switching Circuits: JFET Switching - A Biasing FET Switching Circuits is normally in an off state with zero drain current, or in an on state with a very small drain-source voltage. When the…
MOSFET Biasing Circuits: DE-MOSFET Bias Circuits - DE-MOSFET bias circuits are similar to JFET bias circuits. Any of the FET bias circuits already discussed can be used to produce a negative VGS level for an…
Universal Transfer Characteristics for FET: A Universal Transfer Characteristics for FET is simply a transfer characteristic plotted with IDSS = 1 and VP = 1. Then, instead of the scales being calibrated in milliamps and volts, they are…
JFET Biasing Circuits: Use of Plus/Minus Supplies - When plus/minus supply voltages are to be used with a JFET Biasing Circuits, the gate terminal is usually grounded via RG, as illustrated in Fig. 10-40(a). In…
JFET Bias Circuit Design: Design Approach - Design of JFET Bias Circuit Design is just as simple as design of BJT bias circuits. One major difference is that FET circuit design normally uses a graphical…
JFET Bias Circuit Troubleshooting: Voltage Measurement - JFET Bias Circuit Troubleshooting are similar to those for BJT bias circuits. The major difference is that there is only one junction in the FET (the gate-channel junction)…
Basic JFET Biasing Circuits Comparison: The Basic JFET Biasing Circuits Comparison (gate bias, self-bias, and voltage divider bias) are similar in performance to the three basic BLIP bias circuits, (base bias, collector-to-base bias, and voltage…
Voltage Divider Bias Circuit: For the self-bias circuit, it was seen that increasing the resistance of RS brings ID(max)Â and ID(min)Â closer together, but that increased RS values result in lower ID levels. As will be demonstrated,…
