Self Bias Circuit Diagram: Circuit Operation - In a self bias JFET circuit, gate-source bias is provided by the voltage drop across a resistor in series with the device source terminal. Consider the n-channel JFET…
Gate Bias Circuit: Circuit Operation - Consider the Gate Bias Circuit shown in Fig. 10-6. The FET gate terminal is connected via resistor RG to a bias voltage VG. If the gate is directly connected…
DC Load Line for FET: The DC Load Line for FET circuit is drawn on the device output characteristics (or drain characteristics) in exactly the same way as for a BJT circuit. Refer to the…
MOSFET Construction and Characteristics: Figure 9-28 shows the MOSFET Construction and Characteristics of a metal oxide semiconductor FET (MOSFET), also known as an insulated gate FET. Starting with a high-resistive p-type substrate, two blocks of…
FET Amplification: Consider the n-channel FET Amplification circuit in Fig. 9-26. Note that drain-source terminals are provided with a dc supply (VDD), connected via the drain resistor (R1). The gate-source junctions are reverse-biased by the…
FET Datasheet Specifications: Maximum Ratings -Â AÂ portion of a FET Datasheet Specifications is reproduced in Fig. 9-17. As with other device data sheets, a device type number and brief description is usually given at the start.…
JFET Characteristics: An n-channel JFET Characteristics block representation is shown in Fig. 9-6. With a drain-source voltage applied as illustrated, ID flows in the direction shown producing voltage drops along the channel. Consider the voltage…
Junction Field Effect Transistor Theory: n-Channel JFET - The operating principle of an n-channel Junction Field Effect Transistor Theory (JFET) is illustrated by the block representation in Fig. 9-1(a). A piece of n-type semiconductor material,…
Heat Sink in Transistor: When power is dissipated in a transistor, the heat generated must flow from the collector-base junction to the case, and then to the surrounding atmosphere. When only a very small amount…
Power Dissipation Rating in Transistor: Maximum Power Dissipation - Consider the portion of the data sheet for the 2N3903 and 2N3904 transistor reproduced in Fig. 8-24. The total device dissipation (PD) is specified as 625 mW…
