Early Effect and Base Width Modulation

Early Effect and Base Width Modulation: In active region, the emitter-base (EB) junction is forward biased and collector-base (CB) junction is reverse biased, so the barrier width at EB junction is negligible in comparison with…

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Transistor Circuit Configurations (CB, CE, CC)

Transistor Circuit Configurations (CB, CE, CC): As already mentioned, a Transistor Circuit Configurations is a three-terminal device (having three terminals namely emitter, base and collector) but we require four terminals—two for the input and two…

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Ebers Moll Model for PNP Transistor

Ebers Moll Model for PNP Transistor: Device modelling aims at relating physical device parameters to device terminal characteristics. Device modelling is especially important for integrated circuits, since simple and accurate device models are required to…

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Base Spreading Resistance

Base Spreading Resistance: With two depletion layers penetrating the base, the base holes are confined to the thin region of P-type semiconductor illustrated in Fig. 10.12. The resistance of this thin region (or section) is…

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Current Amplification Factor

Current Amplification Factor: There are two current amplification factors, the alpha factor (α) and the beta factor (β) defined below : The alpha factor (α) is also called the current amplification factor and is the…

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Explain Transistor Current Components

Explain Transistor Current Components: The various transistor current components which flow across the forward-biased emitter junction and reverse biased collector junction are indicated in Fig. 10.11. The current flowing into the emitter is referred to…

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