Ruby Maser: As was know ferrites of certain materials have atomic systems that can be made to resonate magnetically at frequencies dependent on the atomic structure of the material and…

Schottky Barrier Diode: Schottky junctions have been shown and described throughout this chapter, in conjunction with various devices that use them in their construction in Figure 12-4. Accordingly it will…

Pin Diode Construction: The Pin Diode Construction consists of a narrow layer of p-type semiconductor separated from an equally narrow layer of n-type material by a somewhat thicker region of…

Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the…

Gunn Diode Working Principle: A practical Gunn Diode Working Principle consists of a slice like the one shown in Figure 12-24, sometimes with a buffer layer between the active layer…

Gunn Effect: In 1963, Gunn discovered the transferred electron effect which now bears his name. This Gunn Effect is instrumental in the generation of microwave oscillations in bulk semicon­ductor materials.…

Tunnel Diode Applications: In all its Tunnel Diode Applications, the tunnel diode should be loosely coupled to its tuned circuit. With lumped components, this is done by means of a…

Parametric Amplifier Types: The basic Parametric Amplifier Types have already been discussed in detail, but several others also exist. They differ from one another in the variable reactance used, the…