Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the…
Gunn Effect: In 1963, Gunn discovered the transferred electron effect which now bears his name. This Gunn Effect is instrumental in the generation of microwave oscillations in bulk semiconÂductor materials.…
Tunnel Diode Equivalent Circuit: The Tunnel Diode Equivalent Circuit, when biased in the negative-resistance region, is shown in Figure 12-18. At all except the highest frequencies, the series resistance and…
Parametric Amplifier: The parametric amplifier uses a device whose reactance is varied in such a manner that amplification results. It is low-noise because no resistance need be involved in the…
Microwave Transistors: Silicon bipolar transistors were first on the microwave scene, followed by GaAs field-effect transistors. Indeed, FETs now have noticeably lower noise figures, and in the C band and…
Crossed Field Amplifier: The Crossed Field Amplifier is a microwave power amplifier based on the magnetron and looking very much like it. It is a cross between the TWT and…
Types of Travelling Wave Tubes: The TWT is the most versatile and most frequently used microwave tube. Four Types of Travelling Wave Tubes, each with particular applications and performance requirements.…
Multicavity Klystron: The design of the multicavity klystron, together with all the remaining tubes described here, relies on the fact that transit time will sooner or later terminate the usefulness…