Carrier Lifetime in Semiconductor
Carrier Lifetime in Semiconductor: As already explained, in an extrinsic semiconductor the number of holes is equal to the number of free electrons. Due to thermal agitation, new electron-hole pairs…
Carrier Lifetime in Semiconductor: As already explained, in an extrinsic semiconductor the number of holes is equal to the number of free electrons. Due to thermal agitation, new electron-hole pairs…
AC Analysis of FET Circuits Articles: Coupling Capacitors: Coupling Capacitors are required at a circuit input to couple a signal source to the circuit without affecting the bias conditions. Similarly,…
FET Biasing Articles: DC Load Line for FET: The DC Load Line for FET circuit is drawn on the device output characteristics (or drain characteristics) in exactly the same way…
Complementary MOSFET Common Source Power Amplifier: Advantages of MOSFETs: Complementary MOSFET Common Source Power Amplifier have several advantages over power BJTs for large signal amplifier applications. One of the most…
BIFET Amplifier: BJT-FET Considerations : Two-stage BJT circuits usually have relatively low input impedances. To increase Zi, a field effect transistor may be used as the first stage. Circuits which…
Frequency Response of FET Amplifier: Low-Frequency Response - The low Frequency Response of FET Amplifier circuits is determined by exactly the same considerations as for BJT circuits. The lower cutoff…
FET and BJT Difference: FET and BJT Difference (CS, CD, and CG Circuit Comparison) - Table 11-1 compares Zi, Zo and Av for CS, CD, and CG circuits. As already discussed, the…
FET Common Source Amplifier with Unbypassed Source Resistors: Equivalent Circuit - When an unbypassed source resistor (RS) is present in a FET Common Source Amplifier circuit, as shown in Fig.11-10(a),…