Telemetry in Electronic Communications: Telemetry in Electronic Communications consists of performing measurements on distant objects. Although hydraulic or wire circuits may be used for this purpose, this section will deal…
Semiconductor Lasers: Semiconductor Lasers was discovered in 1962 that a gallium arsenide diode, such as the one shown in Figure 12-41, is capable of producing laser action. This occurs when…
Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the…
Gunn Effect: In 1963, Gunn discovered the transferred electron effect which now bears his name. This Gunn Effect is instrumental in the generation of microwave oscillations in bulk semiconÂductor materials.…
Tunnel Diode Equivalent Circuit: The Tunnel Diode Equivalent Circuit, when biased in the negative-resistance region, is shown in Figure 12-18. At all except the highest frequencies, the series resistance and…
Parametric Amplifier Types: The basic Parametric Amplifier Types have already been discussed in detail, but several others also exist. They differ from one another in the variable reactance used, the…
Parametric Amplifier: The parametric amplifier uses a device whose reactance is varied in such a manner that amplification results. It is low-noise because no resistance need be involved in the…
Microwave Transistors: Silicon bipolar transistors were first on the microwave scene, followed by GaAs field-effect transistors. Indeed, FETs now have noticeably lower noise figures, and in the C band and…