Schottky Barrier Diode: Schottky junctions have been shown and described throughout this chapter, in conjunction with various devices that use them in their construction in Figure 12-4. Accordingly it will…

Pin Diode Construction: The Pin Diode Construction consists of a narrow layer of p-type semiconductor separated from an equally narrow layer of n-type material by a somewhat thicker region of…

Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the…

Gunn Diode Working Principle: A practical Gunn Diode Working Principle consists of a slice like the one shown in Figure 12-24, sometimes with a buffer layer between the active layer…

Tunnel Diode Applications: In all its Tunnel Diode Applications, the tunnel diode should be loosely coupled to its tuned circuit. With lumped components, this is done by means of a…

Tunnel Diode Equivalent Circuit: The Tunnel Diode Equivalent Circuit, when biased in the negative-resistance region, is shown in Figure 12-18. At all except the highest frequencies, the series resistance and…

Varactor Diode Operation and Characteristics: Varactor Diode Operation and Characteristics were first used in the early 1950s as simple voltage-variable capacitance and later for frequency modulation of oscillators. They thus…

Trapatt Diode Construction and Working: The Trapatt Diode Construction and Working is derived from and closely related to the IMPATT diode. Indeed, as pointed out near the beginning of this…